EEG-Based Brain-Computer Interfaces
High performance silicon-based GeSn p-i-n photodetectors for short-wave i...
Rectification behavior of polarization effect induced type-II n-GaN/n-typ...
Ultra-High and Fast Ultraviolet Response Photodetectors Based on Lateral ...
Bimetal Schottky Heterojunction Boosting Energy-Saving Hydrogen Productio...
An Integrated Flexible All-Nanowire Infrared Sensing System with Record P...
Photo-excited carrier relaxation dynamics in two-dimensional InSe flakes
Deterministic Magnetization Switching Using Lateral Spin-Orbit Torque
Achieving homogeneity of InGaN/GaN quantum well by well/barrier interface...
Performance deterioration of GaN-based laser diode by V-pits in the upper...
官方微信
友情链接

High operating temperature InAsSb-based mid-infrared focal plane array with a band-aligned compound barrier

2020-03-20

 

Author(s): Deng, GR (Deng, Gongrong); Yang, WY (Yang, Wenyun); Zhao, P (Zhao, Peng); Zhang, YY (Zhang, Yiyun)

Source: APPLIED PHYSICS LETTERS Volume: 116 Issue: 3 Article Number: 031104 DOI: 10.1063/1.5133093 Published: JAN 21 2020

Abstract: In this work, by utilizing a band-aligned AlAs0.08Sb0.92/AlSb-based unipolar compound barrier design, a high-operability (similar to 99.7%) InAsSb bulk absorber-based mid-wavelength infrared 640 x 512 focal plane array (with a 50% cut-off wavelength at 4.1 mu m at 150 K) exhibiting distinct infrared images from 150 K up to 205 K has been achieved, which suggests great potential for high operation temperature detection applications. At 150 K and -400 mV bias, the photodetectors exhibit a low dark current density of similar to 3.9 x 10(-6) A/cm(2), a quantum efficiency of 65.1% at peak responsivity (similar to 3.8 mu m), and a specific detectivity of 1.73 x 10(12) Jones. From 150 to 185 K, the focal plane array exhibits similar to 30.2 mK and similar to 69.5 mK noise equivalent temperature difference values by using f/2.0 optics and 6.45 ms and 0.61 ms integration times, respectively.

Accession Number: WOS:000518031900011

ISSN: 0003-6951

eISSN: 1077-3118

Full Text: /aip.scitation.org/doi/10.1063/1.5133093



关于yabo亚博
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 ? yabo亚博半导体研究所

备案号:京ICP备05085259号 京公网安备110402500052 yabo亚博半导体所声明